Ion-Step Method for Surface Potential Sensing of Silicon Nanowires
نویسندگان
چکیده
منابع مشابه
Ion beam doping of silicon nanowires.
We demonstrate n- and p-type field-effect transistors based on Si nanowires (SiNWs) implanted with P and B at fluences as high as 10(15) cm (-2). Contrary to what would happen in bulk Si for similar fluences, in SiNWs this only induces a limited amount of amorphization and structural disorder, as shown by electrical transport and Raman measurements. We demonstrate that a fully crystalline struc...
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ژورنال
عنوان ژورنال: Analytical Chemistry
سال: 2016
ISSN: 0003-2700,1520-6882
DOI: 10.1021/acs.analchem.6b02230